Method of depositing low dielectric constant carbon doped silicon oxide
US6632735B2 · kind B2 · utility
28Cited by
24References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2001 |
| Grant date | Oct 14, 2003 |
| Priority date | — |
| Expiry date | Aug 21, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a carbon-doped silicon oxide layer is disclosed. The carbon-doped silicon oxide layer is formed by applying an electric field to a gas mixture comprising an organosilane compound and an oxidizing gas. The carbon-doped silicon oxide layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the carbon-doped silicon oxide layer is used as an intermetal dielectric layer. In another integrated circuit fabrication process, the carbon-doped silicon oxide layer is incorporated into a damascene structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.