Laique Khan
3Patents
3h-index
3Co-inventors
33Inventor score
Filing activity: Jul 31, 1996 → Dec 19, 1996
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5963801A | Method of forming retrograde well structures and punch-through barriers using low energy implants | Electricity | 46 | Expired |
| US5877530A | Formation of gradient doped profile region between channel region and heavily doped source/drain contact region of MOS device in integrated circuit structure using a re-entrant gate electrode and a higher dose drain implantation | Electricity | 29 | Expired |
| US6180470A | FETs having lightly doped drain regions that are shaped with counter and noncounter dorant elements | Emerging Cross-Sectional Technologies | 7 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.