Lingyan Shen
1Patents
0h-index
8Co-inventors
19Inventor score
Filing activity: Mar 4, 2016 → Mar 4, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10770556B2 | Fluorinated graphene passivated AlGaN/GaN-based HEMT device and manufacturing method | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.