Fluorinated graphene passivated AlGaN/GaN-based HEMT device and manufacturing method

US10770556B2 · kind B2 · utility

Assignee

• SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Xinhong Cheng · Shanghai, CN
• Lingyan Shen · Shanghai, CN
• Zhongjian Wang · Nanhu, CN
• Duo Cao · Shanghai, CN
• Li Zheng · Damaishan, CN
• Qian Wang · San Jose, US
• Dongliang Zhang · Suzhou, CN
• Jingjie Li · Chenzhou, CN
• Yuehui Yu · Shanghai, CN

Key dates

• Filing date: Mar 4, 2016
• Grant date: Sep 8, 2020
• Expiry date: Jun 26, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691

Abstract

An AlGaN/GaN HEMT based on fluorinated graphene passivation and a manufacturing method thereof. Monolayer graphene (108) is transferred to an AlGaN (104) surface, is treated by using fluoride ions and then is insulated to thereby replace a conventional nitride passivation layer. Then, a high-k material (109) is grown on the graphene (108), and the high-k material (109) and the graphene (108) are jointly used as a gate dielectric for preparing an AlGaN/GaN metal-insulator-semiconductor (MIS) HEMT. Compared with the traditional passivation structure, the graphene (108) has the advantages of small physical thickness (sub-nanometer scale) and low additional threshold voltage. The structure and the method are simple, the effect is remarkable and the application prospect in technical fields of microelectronics and solid-state electronics is wide.