Madhur Bodbe
2Patents
2h-index
9Co-inventors
30Inventor score
Filing activity: Nov 11, 2011 → Feb 25, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9105494B2 | Termination trench for power MOSFET applications | Electricity | 13 | Active |
| US8772901B2 | Termination structure for gallium nitride schottky diode | Electricity | 5 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.