Termination structure for gallium nitride schottky diode
US8772901B2 · kind B2 · utility
5Cited by
4References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 11, 2011 |
| Grant date | Jul 8, 2014 |
| Priority date | — |
| Expiry date | Nov 4, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A termination structure for a nitride-based Schottky diode includes a guard ring formed by an epitaxially grown P-type nitride-based compound semiconductor layer and dielectric field plates formed on the guard ring. The termination structure is formed at the edge of the anode electrode of the Schottky diode and has the effect of reducing electric field crowding at the anode electrode edge, especially when the Schottky diode is reverse biased. In one embodiment, the P-type epitaxial layer includes a step recess to further enhance the field spreading effect of the termination structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.