Martin Scott
4Patents
4h-index
8Co-inventors
36Inventor score
Filing activity: Nov 29, 1988 → Jan 24, 1992
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5202284A | Selective and non-selective deposition of Si.sub.1-x Ge.sub.x on a Si subsrate that is partially masked with SiO.sub.2 | Emerging Cross-Sectional Technologies | 73 | Expired |
| US5256550A | Fabricating a semiconductor device with strained Si.sub.1-x Ge.sub.x layer | Emerging Cross-Sectional Technologies | 46 | Expired |
| US5084411A | Semiconductor processing with silicon cap over Si.sub.1-x Ge.sub.x Film | Emerging Cross-Sectional Technologies | 11 | Expired |
| US5177025A | Method of fabricating an ultra-thin active region for high speed semiconductor devices | Emerging Cross-Sectional Technologies | 11 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.