Selective and non-selective deposition of Si.sub.1-x Ge.sub.x on a Si subsrate that is partially masked with SiO.sub.2
US5202284A · kind A · utility
73Cited by
8References
5Claims
0Family size
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Key dates
| Filing date | Dec 1, 1989 |
| Grant date | Apr 13, 1993 |
| Priority date | — |
| Expiry date | Dec 1, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/942
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Several methods are disclosed for minimizing the number of defects or misfit locations in a SiGe layer selectively or non-selectively deposited on a partially oxide masked Si substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.