Massimo Monselice
2Patents
2h-index
2Co-inventors
27Inventor score
Filing activity: Dec 11, 1998 → May 24, 2001
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6489664B2 | Process for fabricating integrated multi-crystal silicon resistors in MOS technology, and integrated MOS device comprising multi-crystal silicon resistors | Electricity | 24 | Expired |
| US6261916A | Process for fabricating integrated multi-crystal silicon resistors in MOS technology, and integrated MOS device comprising multi-crystal silicon resistors | Electricity | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.