Maxime Garcia-Barros
3Patents
1h-index
3Co-inventors
27Inventor score
Filing activity: Nov 25, 2016 → Jun 20, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9947541B2 | Method of forming spacers for a gate of a transistor | Electricity | 1 | Active |
| US9780000B2 | Method for forming spacers for a transitor gate | Electricity | 1 | Active |
| US10658197B2 | Method for producing low-permittivity spacers | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.