Method for forming spacers for a transitor gate
US9780000B2 · kind B2 · utility
1Cited by
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20Claims
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Assignee
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Key dates
| Filing date | Nov 25, 2016 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Nov 25, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming spacers of a gate of a field-effect transistor is provided, including at least one step of forming a protective layer covering the gate; depositing a layer comprising carbon, said layer being disposed distant from said transistor; modifying the protective layer to form a modified protective layer; forming a protective film on the layer comprising carbon; removing the protective film on surfaces of the protective film that are perpendicular to a main implantation direction; selectively removing the layer comprising carbon; and at least one step of selectively removing the modified protective layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.