Michael J. Bedzyk
1Patents
1h-index
4Co-inventors
25Inventor score
Filing activity: Apr 26, 2012 → Apr 26, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8734674B1 | Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere | Emerging Cross-Sectional Technologies | 5 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.