Method of enhanced lithiation of doped silicon carbide via high temperature annealing in an inert atmosphere
US8734674B1 · kind B1 · utility
5Cited by
1References
20Claims
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Key dates
| Filing date | Apr 26, 2012 |
| Grant date | May 27, 2014 |
| Priority date | — |
| Expiry date | Jun 26, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for enhancing the lithium-ion capacity of a doped silicon carbide is disclosed. The method utilizes heat treating the silicon carbide in an inert atmosphere. Also disclosed are anodes for lithium-ion batteries prepared by the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.