Ming Yean
1Patents
0h-index
9Co-inventors
19Inventor score
Filing activity: Sep 14, 2011 → Sep 14, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8466504B2 | DRAM with dopant stop layer and method of fabricating the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.