Nader JEDIDI
4Patents
1h-index
6Co-inventors
37Inventor score
Filing activity: Apr 11, 2013 → Oct 25, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11837670B2 | Semiconductor devices with single-photon avalanche diodes, light scattering structures, and multiple deep trench isolation structures | Emerging Cross-Sectional Technologies | 1 | Active |
| US9934336B2 | Method of correcting electron proximity effects using Voigt type scattering functions | Electricity | 0 | Active |
| US10553394B2 | Method for the correction of electron proximity effects | Electricity | 0 | Active |
| US12199198B2 | Semiconductor devices with single-photon avalanche diodes, light scattering structures, and multiple isolation structures | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.