Patrick Flynn
3Patents
1h-index
4Co-inventors
37Inventor score
Filing activity: Mar 25, 2010 → Sep 15, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10294584B2 | SiC single crystal sublimation growth method and apparatus | Chemistry; Metallurgy | 7 | Active |
| US11149359B2 | SiC single crystal sublimation growth apparatus | Chemistry; Metallurgy | 0 | Active |
| US11761117B2 | SiC single crystal sublimation growth apparatus | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.