SiC single crystal sublimation growth apparatus
US11761117B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2021 |
| Grant date | Sep 19, 2023 |
| Priority date | — |
| Expiry date | Sep 15, 2041 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B23/066
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A physical vapor transport growth system includes a growth chamber charged with SiC source material and a SiC seed crystal in spaced relation and an envelope that is at least partially gas-permeable disposed in the growth chamber. The envelope separates the growth chamber into a source compartment that includes the SiC source material and a crystallization compartment that includes the SiC seed crystal. The envelope is formed of a material that is reactive to vapor generated during sublimation growth of a SiC single crystal on the SiC seed crystal in the crystallization compartment to produce C-bearing vapor that acts as an additional source of C during the growth of the SiC single crystal on the SiC seed crystal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.