Patrick Jerier
3Patents
1h-index
1Co-inventors
27Inventor score
Filing activity: Jul 29, 1998 → Jan 15, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6162706A | Method of epitaxy on a silicon substrate comprising areas heavily doped with arsenic | Chemistry; Metallurgy | 3 | Expired |
| US6776842B2 | Method of epitaxy on a silicon substrate comprising areas heavily doped with arsenic | Chemistry; Metallurgy | 1 | Expired |
| US6294443A | Method of epitaxy on a silicon substrate comprising areas heavily doped with boron | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.