Method of epitaxy on a silicon substrate comprising areas heavily doped with boron
US6294443A · kind A · utility
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29Claims
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Key dates
| Filing date | Sep 29, 1999 |
| Grant date | Sep 25, 2001 |
| Priority date | — |
| Expiry date | Sep 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of vapor phase epitaxy deposition of silicon on a silicon substrate on or in which exist areas containing dopants at high concentration, among which is boron, while avoiding a selfdoping of the epitaxial layer by boron, including the step of introducing a chlorinated gas, before the epitaxial deposition step, to etch the substrate across a thickness smaller than 100 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.