Peijun Ma
2Patents
0h-index
8Co-inventors
24Inventor score
Filing activity: Jun 18, 2020 → Jan 19, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11557682B1 | Low turn-on voltage GaN diodes having anode metal with consistent crystal orientation and preparation method thereof | Electricity | 0 | Active |
| US11133185B2 | Epitaxial lift-off process of graphene-based gallium nitride | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.