Low turn-on voltage GaN diodes having anode metal with consistent crystal orientation and preparation method thereof

US11557682B1 · kind B1 · utility

Assignee

• Xidian University · CN

Inventors

• Jing Ning · Spring, US
• Chi Zhang · Kunshan, CN
• Jincheng Zhang · Xi'an, CN
• Boyu Wang · Seattle, US
• Dong Wang · Shanghai, CN
• Peijun Ma · Xi'an, CN
• Yue Hao · Xi'an, CN

Key dates

• Filing date: Jan 19, 2022
• Grant date: Jan 17, 2023
• Expiry date: Jan 19, 2042

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/64
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A low turn-on voltage GaN diode having an anode metal with a consistent crystal orientation and a preparation method thereof. The low turn-on voltage GaN diode having an anode metal with a consistent crystal orientation provided by the present disclosure includes a substrate layer, a GaN buffer layer, a GaN channel layer and an AlGaN barrier layer, which are arranged in sequence from bottom to top; a cathode arranged on the AlGaN barrier layer; a groove arranged in the GaN channel layer and the AlGaN barrier layer, and an anode provided on a bottom and a side wall of the groove and part of the AlGaN barrier layer; a dielectric layer provided on an uncovered portion of the AlGaN barrier layer; wherein, a contact portion of the anode with the groove and the AlGaN barrier layer is W or Mo metal with a crystal orientation of <100>.