Peter Hsieh
6Patents
6h-index
19Co-inventors
52Inventor score
Filing activity: Jun 29, 1994 → Apr 18, 2000
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6080529A | Method of etching patterned layers useful as masking during subsequent etching or for damascene structures | Electricity | 403 | Expired |
| US6352081B1 | Method of cleaning a semiconductor device processing chamber after a copper etch process | Emerging Cross-Sectional Technologies | 217 | Expired |
| US6143476A | Method for high temperature etching of patterned layers using an organic mask stack | Electricity | 143 | Expired |
| US5545289A | Passivating, stripping and corrosion inhibition of semiconductor substrates | Emerging Cross-Sectional Technologies | 108 | Expired |
| US6331380A | Method of pattern etching a low K dielectric layer | Electricity | 92 | Expired |
| US6458516B1 | Method of etching dielectric layers using a removable hardmask | Electricity | 65 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.