Method for high temperature etching of patterned layers using an organic mask stack
US6143476A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 1997 |
| Grant date | Nov 7, 2000 |
| Priority date | — |
| Expiry date | Dec 12, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure pertains to a method of patterning a semiconductor device feature which provides for the easy removal of any residual masking layer which remains after completion of a pattern etching process. The method provides for a multi-layered masking structure which includes a layer of high-temperature organic-based masking material overlaid by either a layer of a high-temperature inorganic masking material which can be patterned to provide an inorganic hard mask, or by a layer of high-temperature imageable organic masking material which can be patterned to provide an organic hard mask. The hard masking material is used to transfer a pattern to the high-temperature organic-based masking material, and then the hard masking material is removed. The high-temperature organic-based masking material is used to transfer the pattern to an underlying semiconductor device feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.