Prashanth Paramahans Manik
1Patents
0h-index
4Co-inventors
19Inventor score
Filing activity: Nov 3, 2020 → Nov 3, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11387364B2 | Transistor with phase transition material region between channel region and each source/drain region | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.