Transistor with phase transition material region between channel region and each source/drain region

US11387364B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Avinash Lahgere · Kanchinakote, IN
• Prashanth Paramahans Manik · Kanchinakote, IN
• Peter Javorka · Radebeul, DE
• Ali Icel · Sunnyvale, US
• Mohit Bajaj · Savanuru, IN

Key dates

• Filing date: Nov 3, 2020
• Grant date: Jul 12, 2022
• Expiry date: Nov 3, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6218
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A transistor includes a semiconductor substrate, a first source/drain region and a second source/drain region in the semiconductor substrate with a channel region between the source/drain regions, and a gate over the channel region. In addition, the transistor includes a first phase transition material (PTM) region between the first source/drain region and the channel region, and a second PTM region between the second source/drain region and the channel region. The PTM regions provide the transistor with improved off-state current (IOFF) without affecting the on-state current (ION), and thus an improved ION/IOFF ratio. The transition threshold of PTM regions from dielectric to conductor can be customized based on, for example, PTM material type, doping therein, and/or strain therein.