Robert E. Bendernagel
4Patents
3h-index
14Co-inventors
47Inventor score
Filing activity: Dec 2, 1985 → Dec 30, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5061652A | Method of manufacturing a semiconductor device structure employing a multi-level epitaxial structure | Electricity | 45 | Expired |
| US6800518B2 | Formation of patterned silicon-on-insulator (SOI)/silicon-on-nothing (SON) composite structure by porous Si engineering | Electricity | 28 | Expired |
| US5159429A | Semiconductor device structure employing a multi-level epitaxial structure and method of manufacturing same | Electricity | 5 | Expired |
| US4701998A | Method for fabricating a bipolar transistor | Emerging Cross-Sectional Technologies | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.