Robert L. Wourms
2Patents
2h-index
2Co-inventors
24Inventor score
Filing activity: Jun 18, 1980 → Mar 23, 1981
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4361599A | Method of forming plasma etched semiconductor contacts | Electricity | 38 | Expired |
| US4347654A | Method of fabricating a high-frequency bipolar transistor structure utilizing permeation-etching | Emerging Cross-Sectional Technologies | 18 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.