Method of forming plasma etched semiconductor contacts
US4361599A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 23, 1981 |
| Grant date | Nov 30, 1982 |
| Priority date | — |
| Expiry date | Mar 23, 2001 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76886
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the fabrication of semiconductor devices it has been found useful to employ plasma etching to create contact holes in the insulating layers that cover the wafers being processed. In particular, when wafers are being fabricated that employ small diameter contacts, it is difficult to ensure that all contact holes are created simultaneously. If etching is continued sufficiently to make sure that all of the contact holes over the wafer are fully etched, it is found that a certain proportion are overetched. If the silicon semiconductor is converted to a metal silicide in the region where contact is to be made subsequently, its plasma etch rate can be reduced sufficiently to avoid overetching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.