Sandra C. Hangarter
3Patents
0h-index
12Co-inventors
31Inventor score
Filing activity: Jan 30, 2014 → Jan 28, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10494738B2 | Growth of crystalline materials on two-dimensional inert materials | Chemistry; Metallurgy | 0 | Active |
| US10266963B2 | Growth of crystalline materials on two-dimensional inert materials | Chemistry; Metallurgy | 0 | Active |
| US10928351B2 | Plasma modified epitaxial fabricated graphene on SiC for electrochemical trace detection of explosives | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.