Patent · US Active

Growth of crystalline materials on two-dimensional inert materials

US10266963B2 · kind B2 · utility

0Cited by

2References

4Claims

0Family size

Assignee

United States of America as represented by the Secretary of the Air Force · US

Inventors

Neeraj Nepal · Salem, US
Virginia D. Wheeler · Alexandria, US
Charles R. Eddy, Jr. · Columbia, US
Francis J. Kub · Arnold, US
Travis J. Anderson · Alexandria, US
Michael A. Mastro · Fairfax, US
Rachael L. Myers-Ward · Springfield, US
Sandra C. Hangarter · Gaithersburg, US

Key dates

Filing date	Jan 30, 2014
Grant date	Apr 23, 2019
Priority date	—
Expiry date	Dec 18, 2035

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B29/48
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method of growing crystalline materials on two-dimensional inert materials comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material. A crystalline material grown on a two-dimensional inert material made from the process comprising functionalizing a surface of a two-dimensional inert material, growing a nucleation layer on the functionalized surface, and growing a crystalline material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.