Sangmin Jun
2Patents
0h-index
5Co-inventors
24Inventor score
Filing activity: Oct 23, 2020 → Nov 23, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US12266418B2 | Memory device having row driver circuits for reducing leakage currents during power off | Physics | 0 | Active |
| US11115006B1 | Internal latch circuit and method for generating latch signal thereof | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.