Sangwook Lim
1Patents
0h-index
6Co-inventors
19Inventor score
Filing activity: May 28, 2008 → May 28, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8105930B2 | Method of forming dielectric including dysprosium and scandium by atomic layer deposition and integrated circuit device including the dielectric layer | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.