Method of forming dielectric including dysprosium and scandium by atomic layer deposition and integrated circuit device including the dielectric layer
US8105930B2 · kind B2 · utility
0Cited by
5References
23Claims
0Family size
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Key dates
| Filing date | May 28, 2008 |
| Grant date | Jan 31, 2012 |
| Priority date | — |
| Expiry date | Feb 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, the method of forming a dielectric layer includes supplying a first precursor at a temperature less than 400 degrees Celsius to a chamber including a substrate. The first precursor includes dysprosium. A first reaction gas is supplied to the chamber to react with the first precursor. A second precursor is supplied at a temperature less than 400 degrees Celsius to the chamber, and the second precursor includes scandium. A second reaction gas is supplied to the chamber to react with the second precursor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.