Séverin Rouchier
1Patents
0h-index
1Co-inventors
16Inventor score
Filing activity: Feb 15, 2018 → Feb 15, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11189519B2 | Masking a zone at the edge of a donor substrate during an ion implantation step | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.