Masking a zone at the edge of a donor substrate during an ion implantation step
US11189519B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 15, 2018 |
| Grant date | Nov 30, 2021 |
| Priority date | — |
| Expiry date | Mar 1, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76237
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming a predetermined separation zone inside a donor substrate, in particular, to be used in a process of transferring a layer onto a carrier substrate comprises an implantation step that is carried out such that the implantation dose in a zone of the edge of the donor substrate is lower than the implantation dose in a central zone of the donor substrate to limit the formation of particles during thermal annealing. The present disclosure also relates to a donor substrate for a process of transferring a thin layer onto a carrier substrate produced by means of the process described above. The present disclosure also relates to a device for limiting an implantation region to a zone of the edge of a donor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.