Syohei Sima
1Patents
1h-index
2Co-inventors
22Inventor score
Filing activity: Apr 29, 1980 → Apr 29, 1980
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4283439A | Method of manufacturing a semiconductor device by forming a tungsten silicide or molybdenum silicide electrode | Emerging Cross-Sectional Technologies | 22 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.