Method of manufacturing a semiconductor device by forming a tungsten silicide or molybdenum silicide electrode
US4283439A · kind A · utility
22Cited by
6References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1980 |
| Grant date | Aug 11, 1981 |
| Priority date | — |
| Expiry date | Apr 29, 2000 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/147
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device comprises the steps of forming an interconnection electrode made of a refractory metal or a silicide of the metal on an insulating film formed on a semiconductor substrate with necessary elements already formed, forming a silicon nitride film on the interconnection electrode, and forming a silicon oxide film on the silicon nitride film, thereby preventing the elements from being deteriorated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.