Teck Koon Lee
3Patents
3h-index
6Co-inventors
36Inventor score
Filing activity: Nov 24, 1997 → Sep 9, 1999
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5856225A | Creation of a self-aligned, ion implanted channel region, after source and drain formation | Electricity | 186 | Expired |
| US6252277A | Embedded polysilicon gate MOSFET | Electricity | 74 | Expired |
| US6207534A | Method to form narrow and wide shallow trench isolations with different trench depths to eliminate isolation oxide dishing | Electricity | 20 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.