Inventor · Shanghai, CN

Tengye Wang

3Patents
0h-index
5Co-inventors
21Inventor score

Filing activity: Mar 24, 2020 → May 1, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US11031060B2 Data reading circuit and storage unit Physics 0 Active
US11087815B2 Readout circuit of magnetic memory and magnetic memory Physics 0 Active
US11295795B2 Data reading circuit and storage unit Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.