Readout circuit of magnetic memory and magnetic memory

US11087815B2 · kind B2 · utility

Assignees

• Semiconductor Manufacturing International (Shanghai) Corporation · CN
• Semiconductor Manufacturing International (Beijing) Corporation · CN

Inventors

• Siwen Zheng · Shanghai, CN
• Hao Ni · Shanghai, CN
• Tengye Wang · Shanghai, CN
• Tao Wang · Beijing, CN

Key dates

• Filing date: Mar 24, 2020
• Grant date: Aug 10, 2021
• Expiry date: Mar 24, 2040

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C11/1673
• WIPO field: Computer technology
• WIPO sector: Electrical engineering

Abstract

Readout circuit and magnetic memory are provided. The readout circuit includes a first charging capacitor with one end grounded and another end coupled to an output of a data unit; a first pre-charge module for charging the first charging capacitor; a first discharge control module for controlling a magnitude of a data voltage; a second charging capacitor with one end grounded and another end coupled to an output of a reference unit; a second pre-charge module for charging the second charging capacitor; a second discharge control module for controlling a magnitude of a reference voltage; and a sense amplifier for outputting readout signals.