Thierry Valet
13Patents
8h-index
12Co-inventors
65Inventor score
Filing activity: Jul 19, 1991 → Jan 29, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7088609B2 | Spin barrier enhanced magnetoresistance effect element and magnetic memory using the same | Physics | 149 | Expired |
| US7369427B2 | Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements | Electricity | 143 | Expired |
| US7057921B2 | Spin barrier enhanced dual magnetoresistance effect element and magnetic memory using the same | Physics | 134 | Expired |
| US5961848A | Process for producing magnetoresistive transducers | Emerging Cross-Sectional Technologies | 93 | Expired |
| US5282104A | Magnetic reading device with read head matrix network | Physics | 29 | Expired |
| US6714370B2 | Write head and method for recording information on a data storage medium | Physics | 21 | Expired |
| US5251088A | Magnetic read head with magneto-resistance effect | Physics | 20 | Expired |
| US5463516A | Magnetoresistive transducer or magnetic read head including a layer of composite material including conducting magnetic particles in an insulating material | Electricity | 13 | Expired |
| US6304522A | Data medium optical recording/reading device | Physics | 6 | Expired |
| US5306573A | Magnetic device and process for production of magnetoresistive sensors according to this process | Emerging Cross-Sectional Technologies | 6 | Expired |
| US5335120A | Device for reading a set of resistive elements featuring interrogation and voltage stabilization circuits | Physics | 5 | Expired |
| US5696447A | Magneto-resistive magnetic field sensor with pole pieces and increased sensitivity | Physics | 3 | Expired |
| US7495303B2 | Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.