Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements
US7369427B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 9, 2004 |
| Grant date | May 6, 2008 |
| Priority date | — |
| Expiry date | Mar 26, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/30
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned and free layers. The spacer layer is nonmagnetic. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element. In one aspect, the method and system include providing a spin engineered layer adjacent to the free layer. The spin engineered layer is configured to more strongly scatter majority electrons than minority electrons. In another aspect, at least one of the pinned, free, and spacer layers is a spin engineered layer having an internal spin engineered layer configured to more strongly scatter majority electrons than minority electrons. In this aspect, the magnetic element may include another pinned layer and a barrier layer between the free and pinned layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.