Thomas McKinnon
2Patents
2h-index
4Co-inventors
33Inventor score
Filing activity: Feb 9, 2009 → Oct 22, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9449979B2 | Ferroelectric memory device and fabrication process thereof, and methods for operation thereof | Physics | 6 | Active |
| US8262942B2 | Hollow carbon nanosphere based secondary cell electrodes | Emerging Cross-Sectional Technologies | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.