Ferroelectric memory device and fabrication process thereof, and methods for operation thereof
US9449979B2 · kind B2 · utility
Inventors
Key dates
| Filing date | Oct 22, 2015 |
| Grant date | Sep 20, 2016 |
| Priority date | — |
| Expiry date | Oct 22, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/223
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A new form of a solid-state non-volatile memory cell is presented. The solid-state memory cell comprises a series of different layers of ferroelectric materials, semiconductors, ferroelectric semiconductors, metals, and ceramics, and oxides. The memory device stores information in the direction and magnitude of polarization of the ferroelectric layers. Additionally, a method is presented for storing multiple bits of information in a single memory cell by allowing partial polarization of a single ferroelectric layer and stacking of multiple ferroelectric functional units on top of each other. Additionally, a technique for reading and writing said memory cell is presented. Additionally, the memory cell design allows for the formation of Schottky barriers which act to improve functionality and increase resistance. Additionally, a method is presented for depositing textured lithium niobate thin films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.