Vikram Madhukar Labhe
1Patents
1h-index
3Co-inventors
25Inventor score
Filing activity: Feb 12, 2002 → Feb 12, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6510076B1 | Variable read/write margin high-performance soft-error tolerant SRAM bit cell | Physics | 36 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.