Wang Xinpeng
1Patents
1h-index
8Co-inventors
25Inventor score
Filing activity: Jan 11, 2017 → Jan 11, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9959927B2 | Multi-step voltage for forming resistive access memory (RRAM) cell filament | Electricity | 4 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.