Patent · US Active

Multi-step voltage for forming resistive access memory (RRAM) cell filament

US9959927B2 · kind B2 · utility

4Cited by

1References

32Claims

0Family size

Assignee

Silicon Storage Technology, Inc. · US

Inventors

Feng Zhou · Ann Arbor, US
Xian Liu · Sunnyvale, US
Nhan Do · Saratoga, US
Hieu Van Tran · San Jose, US
Hung Quoc Nguyen · Carrollton, US
Mark Reiten · Alamo, US
Zhixian Chen · Singapore, SG
Wang Xinpeng · Singapore, SG
Guo-Qiang Lo · Singapore, SG

Key dates

Filing date	Jan 11, 2017
Grant date	May 1, 2018
Priority date	—
Expiry date	Jan 11, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10N70/20
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A memory device and method comprising a metal oxide material disposed between and in electrical contact with first and second conductive electrodes, and a voltage source configured to apply a plurality of voltage pulses spaced apart in time across the first and second electrodes. For each one of the voltage pulses, an amplitude of the voltage increases during the voltage pulse.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.