Xing Yu
11Patents
6h-index
8Co-inventors
51Inventor score
Filing activity: Apr 26, 1999 → Jan 11, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6090691A | Method for forming a raised source and drain without using selective epitaxial growth | Electricity | 37 | Expired |
| US6096647A | Method to form CoSi.sub.2 on shallow junction by Si implantation | Electricity | 20 | Expired |
| US6218234A | Dual gate and double poly capacitor analog process integration | Electricity | 15 | Expired |
| US6319783A | Process to fabricate a novel source-drain extension | Electricity | 11 | Expired |
| US6376319B2 | Process to fabricate a source-drain extension | Electricity | 10 | Expired |
| US6100161A | Method of fabrication of a raised source/drain transistor | Electricity | 7 | Expired |
| US7969543B2 | Retardation films having single retardation value with variation | Physics | 3 | Active |
| US6455384B2 | Method for forming MOSFET device having source/drain extension regions located underlying L shaped spacers | Electricity | 2 | Expired |
| US7557884B2 | Bistable liquid crystal device | Physics | 1 | Expired |
| US7236219B2 | Color twisted nematic liquid crystal displays | Physics | 0 | Expired |
| US6919947B2 | Color vertically aligned liquid crystal displays | Physics | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.