Xiwei Bai
3Patents
1h-index
6Co-inventors
30Inventor score
Filing activity: Jun 11, 2018 → Mar 20, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10600961B2 | Scalable and low-voltage electroforming-free nanoscale vanadium dioxide threshold switch devices and relaxation oscillators with current controlled negative differential resistance | Electricity | 1 | Active |
| US10636880B2 | Method of fabricating electrically isolated diamond nanowires and its application for nanowire MOSFET | Electricity | 0 | Active |
| US10879358B2 | Method of fabricating electrically isolated diamond nanowires and its application for nanowire MOSFET | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.