Method of fabricating electrically isolated diamond nanowires and its application for nanowire MOSFET
US10879358B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2020 |
| Grant date | Dec 29, 2020 |
| Priority date | — |
| Expiry date | Mar 20, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2021/26573
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating an electrically isolated diamond nanowire includes forming a diamond nanowire on a diamond substrate, depositing a dielectric or a polymer on the diamond nanowire and on the diamond substrate, planarizing the dielectric or the polymer, etching a portion of the planarized dielectric or polymer to expose a first portion of the diamond nanowire, depositing a metal layer to conformably cover the first portion of the diamond nanowire, and implanting ions into a second portion of the diamond nanowire between the first portion of the diamond nanowire and the diamond substrate or at an intersection of the diamond nanowire and the diamond substrate, wherein the ions are implanted at an oblique angle from a first side of the diamond nanowire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.